| 发明名称 |
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE, AND SUBSTRATE PROCESSING APPARATUS |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device including a metal film which has, with lower costs, a necessary work function and oxidation resistance. <P>SOLUTION: The semiconductor device includes: an insulating film disposed on a substrate; and a metal film provided adjacent to the insulating film. The metal film includes a stacked structure of a first metal film and a second metal film. The first metal film is composed of a material whose oxidation resistance is greater than that of the second metal film. The second metal film is composed of a material different from the first metal film having a work function greater than 4.8 eV. The first metal film is provided between the second metal film and the insulating film. <P>COPYRIGHT: (C)2011,JPO&INPIT |
| 申请公布号 |
JP2011142226(A) |
申请公布日期 |
2011.07.21 |
| 申请号 |
JP20100002256 |
申请日期 |
2010.01.07 |
| 申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
HORII SADAYOSHI;OGAWA ARIHITO;ITAYA HIDEJI |
| 分类号 |
H01L29/423;C23C16/06;H01L21/28;H01L21/285;H01L21/822;H01L21/8242;H01L27/04;H01L27/108;H01L29/49;H01L29/78 |
主分类号 |
H01L29/423 |
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