发明名称 |
NONVOLATILE MEMORY DEVICE AND RELATED PROGRAM VERIFICATION CIRCUIT |
摘要 |
A program verification circuit comprises a failed state counting unit and a failed bit counting unit. The failed state counting unit counts failed program states among a plurality of program states, and generates a first program mode signal indicating whether counting of failed bits is required. The failed bit counting unit selectively counts failed bits in response to the first program mode signal, and generates a second program mode signal indicating whether a program operation is completed.
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申请公布号 |
US2011179322(A1) |
申请公布日期 |
2011.07.21 |
申请号 |
US20100975476 |
申请日期 |
2010.12.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JI-SANG;KWON OH-SUK |
分类号 |
G06F11/267;G11C16/04;G11C16/34;G11C29/42 |
主分类号 |
G06F11/267 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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