| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve a structure, wherein signal charge from a sensor of an MOS imaging device can not be perfectly read at a low reading voltage. <P>SOLUTION: In the structure where a plurality of unit pixels each including a sensor S having a photoelectric conversion region 20 and an insulated gate transistor MOS for reading signal charge from the sensor S are arranged, the photoelectric conversion region of the sensor S is structured to form a single potential void for the signal charge, and a gate electrode 18 of the insulated gate transistor MOS is formed in a pattern in which an intermediate part of its channel width direction is located on the central part of the potential void or on the vicinity thereof. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
