发明名称 Improvements in or relating to germanium wafer rectifier units
摘要 876,358. Semi-conductor devices. ENGLISH ELECTRIC VALVE CO. Ltd. May 15, 1959 [Aug. 21, 1958], No. 26949/58. Class 37. In a rectifier, connection is made &c a germanium wafer by cold welding a slightly resilient heavy conductor to the surface. Fig. 1 shows the two halves of the assembly before the welding takes place. The germanium wafer 1 has one face soldered to the flat upper face of a copper heat sink 2 which is sealed to the lower part 3 of the rectifier housing. A rectangular area 4 on the top of the wafer is coated with indium, nickel and a second indium coating. Soldered through the top of the housing is a flat copper strip 5. The lower face 10 of the looped portion is coated with indium so that when the two parts of the housing are brought together and slightly rotated, the conductor is able to give slightly and a cold weld is formed between the conductor and the wafer. Part 8 of the housing is of glass and flange 9 on the upper part is sealed or welded inside flange 3 on the lower. The assembly is exhausted through tube 7. In a modification (Fig. 4, not shown), a tube through the centre of the housing serves both to exhaust the housing and to support a flexible loop cold-welded to the germanium.
申请公布号 GB876358(A) 申请公布日期 1961.08.30
申请号 GB19580026949 申请日期 1958.01.21
申请人 ENGLISH ELECTRIC VALVE COMPANY LIMITED 发明人 TIPPLE PETER MORLAND
分类号 H01L23/488 主分类号 H01L23/488
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