| 摘要 |
<p>Crystalline semi-conductor material is produced by epitaxial deposition of one semiconductor material on to a dendritic crystal of the same or different semi-conductor material. The deposited material is obtained from a gas by chemical reaction. The dendritic material may be pure or doped material and one or more pure or doped layers of the same or different conductivity types may be deposited if desired by using successive furnaces and reaction chambers. Deposition may be effected by the process described in Specification 914,042 in which some of the carrier crystal is first removed before deposition commences. The semi-conductor material may consist of germanium, silicon or gallium arsenide. The invention may be applied to the production of solid body micro circuits incorporating different circuit elements in one body. Specification 861,135 also is referred to.</p> |
