| 摘要 |
<p>A semiconductor laser element (1) includes an active layer (11), an n-type carrier blocking layer (13) arranged so as to be adjacent to the active layer (11) and having a bandgap width that is equal to or greater than those of barrier layers (11b), an n-type waveguide layer (14) arranged on a side opposite to a side of the n-type carrier-blocking layer (13) on which the active layer (11) is arranged, so as to be adjacent to the n-type carrier blocking layer (13), an n-type clad layer (15) arranged on a side opposite to a side of the n-type waveguide layer (14) on which the active layer (11) is arranged, so as to be adjacent to the n-type waveguide layer (14), and having a bandgap width that is greater than that of the n-type waveguide layer (14), and a p-type clad layer (12) arranged on a side opposite to a side of the active layer (11) on which the n-type carrier blocking layer (13) is arranged, so as to be adjacent to the active layer (11), and having a bandgap width that is greater than those of the barrier layers (11b) and the n-type waveguide layer (14).</p> |
