发明名称 |
Metal line of semiconductor device having a diffusion barrier and method for forming the same |
摘要 |
A metal line of a semiconductor device includes an insulation layer formed on a semiconductor substrate. The insulation layer has a metal line forming region. A diffusion barrier is formed on a surface of the metal line forming region of the insulation layer. The diffusion barrier includes a stack structure including an MoxSiyNz layer and an Mo layer. A metal layer is formed on the diffusion barrier to fill the metal line forming region of the insulation layer.
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申请公布号 |
US7981781(B2) |
申请公布日期 |
2011.07.19 |
申请号 |
US20090471801 |
申请日期 |
2009.05.26 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
OH JOON SEOK;YEOM SEUNG JIN;KIM JAE HONG |
分类号 |
H01L21/44;H01L21/425;H01L21/4763 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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