发明名称 |
Controlled dose ion implantation |
摘要 |
An ion implanter for creating a ribbon or ribbon-like beam by having a scanning device that produces a side to side scanning of ions emitting by a source to provide a thin beam of ions moving into an implantation chamber. A workpiece support positions a workpiece within the implantation chamber and a drive moves the workpiece support up and down through the thin ribbon beam of ions perpendicular to the plane of the ribbon to achieve controlled beam processing of the workpiece. A control includes a first control output coupled to said scanning device to limit an extent of side to side scanning of the ion beam to less than a maximum amount and thereby limit ion processing of the workpiece to a specified region of the workpiece and a second control output coupled to the drive simultaneously limits an extent of up and down movement of the workpiece to less than a maximum amount and to cause the ion beam to impact a controlled portion of the workpiece.
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申请公布号 |
US7982195(B2) |
申请公布日期 |
2011.07.19 |
申请号 |
US20040940263 |
申请日期 |
2004.09.14 |
申请人 |
AXCELIS TECHNOLOGIES, INC. |
发明人 |
AGARWAL ADITYA;RATHMELL ROBERT D.;HOGLUND DAVID |
分类号 |
G21K5/10 |
主分类号 |
G21K5/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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