发明名称 |
Field-effect transistor, semiconductor device, a method for manufacturing them, and a method of semiconductor crystal growth |
摘要 |
A field-effect transistor which comprises a buffer layer and a barrier layer each of which is made of a Group III nitride compound semiconductor and has a channel at the interface inside of the buffer layer to the barrier layer, wherein the barrier layer has multiple-layer structure comprising an abruct interface providing layer which composes the lowest semiconductor layer in said barrier layer and whose composition varies rapidly at the interface of said buffer layer, and an electrode connection plane providing layer which constructs the uppermost semiconductor layer and whose upper surface is formed flat.
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申请公布号 |
US7981744(B2) |
申请公布日期 |
2011.07.19 |
申请号 |
US20050578965 |
申请日期 |
2005.06.09 |
申请人 |
TOYODA GOSEI CO., LTD. |
发明人 |
KOSAKI MASAYOSHI;HIRATA KOJI;SENDA MASANOBU;SHIBATA NAOKI |
分类号 |
H01L21/336;H01L21/205;H01L21/3205;H01L21/335;H01L21/338;H01L29/20;H01L29/778;H01L29/812 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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