| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor element capable of reducing variation in sensitivity of an optical sensor, and to provide a method of fabricating the semiconductor element. <P>SOLUTION: The semiconductor element has an N+ layer 16 formed in a region below a Metal layer 26 which does not transmit light, i.e. a region on which irradiated light from a direction above an N-WELL layer 14 is not incident, and not formed in a region on which the light from above the N-WELL layer 14 is incident. Consequently, light incident on a light-receiving element 10 is not transmitted through the N+ layer 16, but reaches a PN junction surface between a P-Sub layer 12 and the N-WELL layer 14 to excite electrons. <P>COPYRIGHT: (C)2011,JPO&INPIT |
