| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a self-selecting PCM device that does not require a dedicated selector transistor. <P>SOLUTION: A self-selecting storage device is formed by depositing a zinc oxide (ZnO) over a phase-change material through the use of atomic layer deposition (ALD). A diode formed at the ZnO/GST interface exhibits both rectification capability and storage capability within the PCM architecture. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
