| 摘要 |
According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type. The first semiconductor layer is formed with a trench. The second semiconductor layer is buried in the trench, and includes a hollow portion. A length of the hollow portion along depth direction of the trench is 5 μm or less or 15 μm or more.
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