| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing particle used for polishing a semiconductor wafer, a glass hard disk, an alumina hard disk or the like and capable of reducing generation of scratch on a surface to be polished when it is used at a practical polishing speed. SOLUTION: The polishing particle is made to a polishing particle by preparing a composite particle (hetero-aggregate) of an organic particle and an inorganic particle having the size equal or more to that of the organic particle. In the polishing particle, the particle is deformed when a polishing pressure becomes high, generation of scratch is suppressed by maintaining the polishing speed, and sufficient polishing performance can be exhibited. COPYRIGHT: (C)2011,JPO&INPIT |
