| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a redundant storage device that maintains reliability while improving a data transfer speed and the limited number of rewrites. <P>SOLUTION: The storage device includes systems A and B each configured of a plurality of non-volatile semiconductor elements (NAND-Flash 7) connected to a plurality of buses (buses 0 to 3). The non-volatile semiconductor elements are associated with each other such that when the buses (buses 0 to 3) in the system A connected to the non-volatile semiconductor elements (NAND-Flash 7) are changed, the buses (buses 4 to 7) in the system B connected to the non-volatile semiconductor elements are changed, accordingly. In response to a write request or a read request, the non-volatile semiconductor element (NAND-Flash 7) in one of the systems A and B is selected such that the non-volatile semiconductor element (NAND-Flash 7) connected to the same bus is not repeatedly selected. The non-volatile semiconductor element (NAND-Flash 7) in the other system is selected based on its association with the selected non-volatile semiconductor element (NAND-Flash 7). <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
