COMPOSITION AND METHOD FOR IMMERSION LITHOGRAPHY

摘要

PROBLEM TO BE SOLVED: To provide a new photoresist composition that is useful for immersion lithography.

SOLUTION: The preferred photoresist composition includes one or more materials that can be substantially non-mixable with a resin component of a resist. The further-preferred photoresist composition includes: (1) an Si substitution; (2) a fluorine substitution; (3) a hyperbranched polymer; and/or (4) polymeric particles. The particularly-preferred photoresists can exhibit the reduced leaching of resist materials into an immersion fluid contacting with the resist layer during immersion lithography processing.

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