| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern forming method by which a pattern excellent in exposure latitude (EL) and line width variance (LWR) or CD (critical dimension) uniformity (CDU) is formed; to provide a pattern formed by the same; to provide a chemically amplified resist composition used in the pattern forming process; and to provide a resist film formed from the resist composition. <P>SOLUTION: The pattern forming method includes (α) a process for forming a film by using a chemically amplified resist composition containing (A) a resin having a non-aromatic cyclic organic group, (B) a compound generating an acid by the irradiation with an actinic ray or radiation, and (C) a crosslinking agent, (β) a process for exposing the formed film, and (γ) a process for developing the exposed film by using a developing solution containing an organic solvent. A pattern formed by the pattern forming method, a chemically amplified resist composition used in the pattern forming method, and a resist film formed from the resist composition are also provided. <P>COPYRIGHT: (C)2011,JPO&INPIT |
