| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, which is a method of manufacturing a thin-film semiconductor device including a backgrinding process for grinding the back of a substrate where a semiconductor element is formed, and prevents backgrinding from becoming insufficient or advancing excessively, speeds up grinding, and improves a production efficiency. SOLUTION: The method of manufacturing a semiconductor device includes: a step s2, namely an ion implantation process; and a step s6, namely a backgrinding process. In the ion implantation process of the step s2, ions 2 not forming a conductivity type region are implanted into a silicon substrate 1 to form a structure transition layer 3 of which crystal structure has changed. Then, in the backgrinding process of the step s6, the back on the opposite side of the surface where a semiconductor element 4 is formed in the silicon substrate 1 is ground, and grinding is stopped when a change in a grinding speed is detected. COPYRIGHT: (C)2011,JPO&INPIT
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