| 摘要 |
PROBLEM TO BE SOLVED: To provide a CMOS (complementary metal oxide semiconductor) structure formed of an n-channel transistor using an oxide semiconductor, and a p-channel transistor. SOLUTION: The CMOS structure includes: a gate electrode layer; a gate insulating layer; an oxide semiconductor layer; and a source electrode layer, and a drain electrode layer in contact with the oxide semiconductor layer, wherein an electron affinity of the oxide semiconductor used for the oxide semiconductor layer isχ(eV), and a bandgap is E<SB>g</SB>(eV), a work functionϕ<SB>m</SB>of a conductor used for the source electrode layer and the drain electrode layer, satisfies the formulaϕ<SB>m</SB>>χ+E<SB>g</SB>/2, and a barrierϕ<SB>BP</SB>for a hole represented by the formulaχ+E<SB>g</SB>-ϕ<SB>m</SB>is <0.25 eV. COPYRIGHT: (C)2011,JPO&INPIT
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