发明名称 |
ANTIFUSE PROGRAMMABLE MEMORY ARRAY |
摘要 |
<p>Techniques and circuitry are disclosed for efficiently implementing programmable memory array circuit architectures, such as PROM, OTPROM, and other such programmable non-volatile memories. The circuitry employs an antifuse scheme that includes an array of memory bitcells, each containing a program device and an antifuse element configured with current path isolation well and for storing the memory cell state. The bitcell configuration, which can be used in conjunction with column/row select circuitry, power selector circuitry, and/or readout circuitry, allows for high-density memory array circuit designs and layouts.</p> |
申请公布号 |
WO2011084215(A1) |
申请公布日期 |
2011.07.14 |
申请号 |
WO2010US54919 |
申请日期 |
2010.11.01 |
申请人 |
INTEL CORPORATION;CHEN, ZHANPING;KULKARNI, SARVESH H.;ZHANG, KEVIN |
发明人 |
CHEN, ZHANPING;KULKARNI, SARVESH H.;ZHANG, KEVIN |
分类号 |
G11C29/04;G11C16/30;G11C16/34 |
主分类号 |
G11C29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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