| 发明名称 |
CHEMICAL MECHANICAL POLISHING COMPOSITION AND METHOD RELEVANT TO THE SAME |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing composition accelerating removal of silicon oxide and silicon nitride used in the final process of a 3-process CMP-STI (Chemical Mechanical Polishing-Shallow Trench Isolation) method. <P>SOLUTION: The chemical mechanical polishing composition for polishing a base material containing a silicon oxide material and a silicon nitride material contains at least one of a first substance (diethylene triamine pentakis (methyl phosphonic acid)) and a second substance (tetramethyl guanidine); abrasive grains and water as initial components. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
| 申请公布号 |
JP2011139030(A) |
申请公布日期 |
2011.07.14 |
| 申请号 |
JP20100253421 |
申请日期 |
2010.11.12 |
| 申请人 |
ROHM & HAAS ELECTRONIC MATERIALS CMP HOLDINGS INC |
发明人 |
LIU ZHENDONG;GUO YI;REDDY KANCHARLA-ARUN KUMAR;ZHANG GUANGYUN |
| 分类号 |
H01L21/304;B24B37/00;C09K3/14 |
主分类号 |
H01L21/304 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
