NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A non-volatile semiconductor memory device is provided to prevent cost from increasing though the number of laminates are increased. CONSTITUTION: A laminated body forms a plurality of insulation films and a plurality of electrode membranes. A through hole is extended in a laminating direction. A semiconductor pillar is formed within the through hole and is extended toward the laminating direction. A barrier layer(25) is consecutively formed between the electrode membrane and a side of the electrode membrane. A charge storage layer(26) is close to the barrier layer and is consecutively formed on the side of the electrode membrane electrode. A tunnel insulating layer(27) is formed in close to the charge storage layer and the semiconductor pillar on the side of each electrode membrane.