发明名称 Fabrication method of semiconductor integrated circuit device
摘要 A method of fabrication of a semiconductor integrated circuit device, including polishing the entire area of an edge of a wafer, for example, uses three polishing drums in which a polishing drum polishes the upper surface of the edge of the wafer, a polishing drum polishes the central portion of the edge of the wafer and a polishing drum polishes the lower surface of the edge of the wafer, thereby preventing occurrence of obstacles which cause defoliation of thin films on the edge of the wafer.
申请公布号 US7977234(B2) 申请公布日期 2011.07.12
申请号 US20100781816 申请日期 2010.05.18
申请人 RENESAS ELECTRONICS CORPORATION 发明人 ARAI TOSHIYUKI;KAWAI RYOUSEI;TSUCHIYAMA HIROFUMI;KANAI FUMIYUKI;NAKABAYASHI SHINICHI
分类号 H01L21/4763;H01L21/76;H01L21/304;H01L21/3105;H01L21/3205;H01L21/321;H01L21/768 主分类号 H01L21/4763
代理机构 代理人
主权项
地址