发明名称 |
Fabrication method of semiconductor integrated circuit device |
摘要 |
A method of fabrication of a semiconductor integrated circuit device, including polishing the entire area of an edge of a wafer, for example, uses three polishing drums in which a polishing drum polishes the upper surface of the edge of the wafer, a polishing drum polishes the central portion of the edge of the wafer and a polishing drum polishes the lower surface of the edge of the wafer, thereby preventing occurrence of obstacles which cause defoliation of thin films on the edge of the wafer.
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申请公布号 |
US7977234(B2) |
申请公布日期 |
2011.07.12 |
申请号 |
US20100781816 |
申请日期 |
2010.05.18 |
申请人 |
RENESAS ELECTRONICS CORPORATION |
发明人 |
ARAI TOSHIYUKI;KAWAI RYOUSEI;TSUCHIYAMA HIROFUMI;KANAI FUMIYUKI;NAKABAYASHI SHINICHI |
分类号 |
H01L21/4763;H01L21/76;H01L21/304;H01L21/3105;H01L21/3205;H01L21/321;H01L21/768 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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