发明名称 Thin film transistor array panel and manufacture thereof
摘要 A method for a thin film transistor array panel includes forming a gate line and a pixel electrode on a substrate, forming a gate insulating layer covering the gate line, forming a data line including a source electrode and a drain electrode on the gate insulating layer, forming an interlayer insulating layer covering the data line and the drain electrode on the gate insulating layer, forming a first opening in the interlayer insulating layer, forming an organic semiconductor in the first opening, forming a passivation layer on the organic semiconductor and the interlayer insulating layer, and forming a second opening in the interlayer insulating layer to expose the pixel electrode.
申请公布号 US7977144(B2) 申请公布日期 2011.07.12
申请号 US20100772845 申请日期 2010.05.03
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHO SEUNG-HWAN;KIM BO-SUNG;SONG KEUN-KYU;CHOI TAE-YOUNG;NOH JUNG-HUN
分类号 H01L21/00 主分类号 H01L21/00
代理机构 代理人
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