发明名称 |
Stacked non-volatile memory device and methods for fabricating the same |
摘要 |
A stacked non-volatile memory device comprises a plurality of bit line and word line layers stacked on top of each other. The bit line layers comprise a plurality of bit lines that can be formed using advanced processing techniques making fabrication of the device efficient and cost effective. The device can be configured for NAND operation.
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申请公布号 |
US7977735(B2) |
申请公布日期 |
2011.07.12 |
申请号 |
US20100717076 |
申请日期 |
2010.03.03 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LAI ERH-KUN;LUE HANG-TING;HSIEH KUANG YEU |
分类号 |
H01L29/792 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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