发明名称 ESD structure that protects against power-on and power-off ESD events
摘要 An electrostatic discharge protection circuit (ESD protection circuit) provides ESD protection to all NMOS/PMOS transistors that are connected to the pins of a CMOS integrated circuit (IC). The ESD protection circuit will protect the CMOS IC against an ESD event, regardless of whether the CMOS IC is powered up, or powered down.
申请公布号 US7978454(B1) 申请公布日期 2011.07.12
申请号 US20070888472 申请日期 2007.08.01
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 PASQUALINI RONALD
分类号 H02H9/00;H02H3/22 主分类号 H02H9/00
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