| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing a reverse current in a boundary without forming a deep isolation structure formed between a diode region and an IGBT region. <P>SOLUTION: The semiconductor device 10 includes a semiconductor substrate 12 having a diode region 20 and an IGBT region 40. On the semiconductor substrate 12, an isolation structure 70 and a lifetime control region 41 are formed between a diode drift region 28 and an IGBT drift region 50. The carrier lifetime of the lifetime control region 41 is shorter than those of the diode drift region 28 and the IGBT drift region 50. An upper end of the lifetime control region 41 is connected to the isolation structure 70. <P>COPYRIGHT: (C)2011,JPO&INPIT |
| 申请公布号 |
JP2011134861(A) |
申请公布日期 |
2011.07.07 |
| 申请号 |
JP20090292487 |
申请日期 |
2009.12.24 |
| 申请人 |
TOYOTA MOTOR CORP |
发明人 |
NAGAOKA TATSUJI;SUGIYAMA TAKAHIDE;KAWAJI SACHIKO |
| 分类号 |
H01L21/336;H01L21/266;H01L21/322;H01L21/76;H01L21/8234;H01L27/04;H01L27/06;H01L27/088;H01L29/739;H01L29/78;H01L29/861 |
主分类号 |
H01L21/336 |
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