SEMICONDUCTOR LIGHT EMITTING DEVICE, AND PREPARATION METHOD THEREOF

摘要

The present invention relates to a preparation method of a semiconductor light emitting device, and a semiconductor light emitting device prepared thereby, wherein the semiconductor light emitting device has an active layer, and a preparation method of the active layer comprising the following steps of: repeatedly laminating an InN-dominant thin film and a GaN-dominant thin film by turns; and increasing the temperature and heat treating the alternately and repeatedly laminated InN-dominant thin films and GaN-dominant thin films to form an InxGa1-xN (0