METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing method a semiconductor device is provided to make it easy controlling a width and a thickness of a resist pattern to a desired size, to enhance a surface roughness and a cross sectional profile shape of the resist pattern and to improve tolerance against a dry engraving process. CONSTITUTION: Resist patterns are formed by exposing and developing a resist film on a substrate. The resist patterns are trimmed and the cross sectional profile of the resist patterns are varied by using the first gas plasma(230). A width of the trimmed resist pattern is increased by using the second gas plasma and the resist pattern is formed.