| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to reduce costs by generating a trench and a via through one mask. CONSTITUTION: A resist mask(210) is generated with a nano imprinting process. A first dielectric layer(240) is formed on a substrate. A diffusion preventing layer(230) is formed on the first dielectric layer. A second dielectric layer(220) is formed on the diffusion preventing layer. A dual damascene is generated by using the resist mask.
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