| 摘要 |
PURPOSE: A method for manufacturing a CMOS transistor is provided to increase a channel BVDSS and reduce leaked currents which flow in a channel. CONSTITUTION: A source junction(312) or drain junctions(314,316) are shared. The source or drain junctions are etched. Source and drain junctions are formed after etching. Therefore the channel BV of a transistor drastically increases, the amount of leaked currents is reduced, and a hot carrier effect is enhanced.
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