| 摘要 |
PURPOSE: A method and apparatus for manufacturing an epitaxial wafer are provided to reduce dependence on an FP process by removing and reducing damages to a wafer formed in a backseal process. CONSTITUTION: A low temperature oxide layer is formed on the rear of a wafer(S110). A silicon layer is deposited on the wafer. The wafer with the silicon layer is wet-etched(S120). The wafer is finally polished(S130).
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