| 摘要 |
PURPOSE: A CMOS image sensor and a manufacturing method thereof are provided to prevent H+ generated in a metal wiring forming process from being diffused to a cell region by forming a barrier pad. CONSTITUTION: A semiconductor substrate has a pixel region and a logic region. A photo diode and a transistor are formed on the pixel area of the semiconductor substrate. An interlayer dielectric layer(160) is formed on the photo diode and the transistor. A metal wiring(220) is formed in the interlayer dielectric layer of the pixel region. A barrier pad is formed in the interlayer dielectric layer on a boundary between the pixel region and the logic region. A color filter layer(180) and a micro lens are successively formed on the interlayer dielectric layer of the pixel region.
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