| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to effectively prevent PID(Plasma Induced Damage) by controlling process factors without the limit of a semiconductor device on a die area. CONSTITUTION: A substrate(21) includes a die area and a scribe lane area. A conductive pattern is formed on the substrate of the die area. A second impurity area(28) is formed in a first impurity area(27). A second impurity area(28) is formed in a first impurity area(27). The first impurity area is formed on the substrate of the scribe lane area. A conductive line(26) electrically connects the conductive pattern to the second impurity area.
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