| 摘要 |
PURPOSE: A method manufacturing of a semiconductor device is provided to suppress stress to lateral direction from bottom of the semiconductor device by installing a metal guard ring around a damage protective pattern. CONSTITUTION: In a method manufacturing of a semiconductor device, a damage protective pattern and a metal guard ring are formed on the semiconductor substrate(10). A first interlayer insulating film(22) is formed over the semiconductor substrate including the damage protective layer pattern and the metal guard ring. A fuse(26) and a first metal line(28) are formed on the first interlayer insulating film. A nitride liner is formed over the first interlayer insulating film including the fuse and the first metal line. A second metal line is formed on the second inter metal dielectric of a pad region.
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