| 发明名称 |
METHOD TO GENERATE AIRGAPS WITH A TEMPLATE FIRST SCHEME AND A SELF ALIGNED BLOCKOUT MASK AND STRUCTURE |
| 摘要 |
A structure and method to produce an airgap on a substrate having a dielectric layer and copper interconnects with sublithographic perforations therein which are ordered throughout the wafer structure in a macro level and a micro level with no change in order orientation and the top layer of the copper interconnects are not exposed.
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| 申请公布号 |
US2011163446(A1) |
申请公布日期 |
2011.07.07 |
| 申请号 |
US20110983885 |
申请日期 |
2011.01.04 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
NITTA SATYANARAYANA VENKATA;PURUSHOTHAMAN SAMPATH;COLBURN MATTHEW E.;EDELSTEIN DANIEL C.;PONOTH SHOM |
| 分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
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