| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to reduce a top-attack degradation which can occur at an upper end of a floating gate by skipping an etching process for eliminating poly remaining in a unnecessary space. CONSTITUTION: An STI is formed on a substrate(100) and then ONO(Oxide Ntride Oxide) film(110) is formed. The first poly layer is formed at an upper part of the ONO film. The first poly layer is patterned and the first gate is formed. An upper end of the first gate upper is oxidized and the second poly layer is formed. The second poly layers(120a) are patterned and the second gate is formed.</p> |
