发明名称 |
LOW POWER CONSUMPTION MIS SEMICONDUCTOR DEVICE |
摘要 |
A logic gate is constructed of an insulated gate field effect transistor (MIS transistor) having a thin gate insulation film. An operation power supply line to the logic gate is provided with an MIS transistor having a thick gate insulation film for switching the supply and stop of an operation power source voltage. A voltage of the gate of the power source switching transistor is made changing in an amplitude greater than an amplitude of an input and an output signal to the logic gate. Current consumption in a semiconductor device configured of MIS transistor of a thin gate insulation film can be reduced and an power source voltage thereof can be stabilized.
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申请公布号 |
US2011163779(A1) |
申请公布日期 |
2011.07.07 |
申请号 |
US201113047554 |
申请日期 |
2011.03.14 |
申请人 |
RENESAS ELECTRONICS CORPORATION |
发明人 |
HIDAKA HIDETO |
分类号 |
H01L21/822;H03K19/003;H01L21/8238;H01L27/04;H01L27/092;H03K17/16;H03K19/00;H03K19/0948 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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