METHOD OF FABRICATING A CONDUCTIVE LAYER IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a conductive layer of a semiconductor substrate is provided to minimize the thickness of a natural oxide layer on the surface of a silicon substrate by loading the silicon substrate in a chemical vapor deposition chamber of a relatively low temperature. CONSTITUTION: A silicon substrate is loaded at the loading temperature(B1) of 250 to 300 degrees centigrade in a chemical vapor deposition chamber. The temperature of the chemical vapor deposition chamber increases from the loading temperature to a process temperature(B2). The process temperature is set at 500 to 550 degrees centigrade. Silicon source gas and impurity source gas are supplied when the temperature of the chemical vapor deposition chamber approaches the process temperature. A singly crystalline silicon layer and a polycrystalline silicon layer are successively laminated on the silicon substrate.