| 摘要 |
PURPOSE: A method for manufacturing an integrated semiconductor device is provided to improve the lifetime of an integrated device by forming contact holes including a void between semiconductor devices. CONSTITUTION: An etching region for forming devices is formed by etching one side of a semiconductor substrate. The semiconductor devices are separated from each other and are fixed to the semiconductor substrate. A silicon nitride layer and a silicon oxide layer(330) are successively formed on the semiconductor substrates for forming the semiconductor devices. First contact holes and dual damascene type second contact holes are formed on the silicon oxide layer. The exposed silicon nitride layer is removed. Metal interconnections(362,364) are formed by filling metal materials in the second contact holes. A void(380) is formed in the first contact holes by blocking each entrance of the first contact holes with metal materials. |
