PURPOSE: A power amplifier is provided to increase the gain of a power amplifier by recompensing capacitance with a PMOSFET(P-Channel Metal Oxide Semiconductor Field Effect Transistor). CONSTITUTION: A first common source transistor(M1) amplifies an input signal to a certain level. A second common source transistor(P1) recompenses an input capacitance. The second common source transistor performs the secondary amplifying function of a first common source transistor. A common gate transistor(M2) is connected with the first common source transistor as a cascode structure. The common gate transistor prevents the breakdown of the first common source transistor by paralllely connecting with the second common source transistor.
