| 摘要 |
PURPOSE: An image sensor and a manufacturing method thereof are provided to improve crosstalk and noise characteristics, by blocking a light incident on a region except a photo diode. CONSTITUTION: A semiconductor substrate(100) includes a pixel region and a peripheral region. A plurality of photo diodes(110) is arranged on the semiconductor substrate of the pixel region. A first insulation layer(120) includes a first wiring arranged along the x axis direction on the semiconductor substrate. A second insulation layer(130) includes a second wiring arranged along the y axis direction on the first insulation layer. A third insulation layer(140) is formed on the second insulation layer. The third insulation layer has a dummy wiring(150) having a cross type pattern(+).
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