| 摘要 |
PURPOSE: A method for manufacturing an image sensor is provided to improve efficiency of the image sensor, by simplifying a gate formation process of a logic region and a pixel region. CONSTITUTION: A logic region and a pixel region are defined on a semiconductor substrate. A first gate(110) is formed on the logic region. A second gate(120) is formed on the pixel region. A spacer layer is formed by stacking a first oxide, a nitride and a second oxide on the semiconductor substrate. A first dry etching process for the second oxide is performed. A second oxide pattern(151,152) is formed on the side wall of the first and the second gate. A second wet etching process for the nitride is performed. A nitride pattern(141,142) is formed on the bottom of the second oxide pattern. A third wet etching process for the first oxide is performed. A first oxide pattern(131,132) is formed on the bottom of the nitride pattern.
|
