| 摘要 |
PURPOSE: An image sensor and a manufacturing method thereof are provided to minimize a dead zone domain of a micro lens and to improve performance thereof. CONSTITUTION: An image sensor includes a micro lens which is formed at a lens expectation area of a planarization layer except for a trench. A color filter array(50) is formed on a semiconductor substrate so as to correspond to an optical sensing element. The planarization layer is formed on a color filter array. A trench is formed between adjacent color filters of the color filter array. The trench is formed in the planarization layer to define the lens reservation area.
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