| 摘要 |
PURPOSE: A test pattern element, a manufacturing method thereof, and a method for measuring a resistance using the same are provided to manufacture a test pattern element including a contact plug and a pad connected to a drift junction after forming a junction in a semiconductor device. CONSTITUTION: A drift junction area(414) is formed in an inside of a semiconductor substrate(400) by injecting impurities between a selection transistor and a memory transistor. A contact plug(418) is electrically connected to the drift junction area. An interlayer dielectric(416) is used for electrically insulating the selection transistor, the memory transistor, and a contact plug. An electrode pad is electrically connected to the contact plug. |
