Methods of splitting CdZnTe layers from CdZnTe substrates for the growth of HgCdTe

摘要

Methods of producing CdZnTe (CZT) layers for the epitaxial growth of HgCdTe thereon include implanting ions into a CZT substrate at a low temperature to form a damaged layer underneath a CZT surface layer, bonding a wafer to the CZT substrate about the CZT surface layer using a bonding material, and, annealing the CZT substrate for a time sufficient to facilitate the splitting of the CZT substrate at the damaged layer from the CZT surface layer.