发明名称 |
ESD protection bipolar device with internal avalanche diode |
摘要 |
In a bipolar device an intrinsic Zener like diode is formed for controlling the triggering voltage and leakage current, the Zener-like diode being formed between the n-collector and the p-base, wherein the collector implant and base diffusion overlap at least partially.
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申请公布号 |
US7973386(B1) |
申请公布日期 |
2011.07.05 |
申请号 |
US20070652982 |
申请日期 |
2007.01.12 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
VASHCHENKO VLADISLAV;KUZNETSOV VLADIMIR;HOPPER PETER J. |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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