| 摘要 |
According to a method of manufacturing a MONOS nonvolatile semiconductor memory device, a tunnel insulating film, a charge storage layer, a block insulating film containing a metal oxide and a control gate electrode are stacked on a semiconductor substrate. Heat treatment is carried out in an atmosphere containing an oxidizing gas after the tunnel insulating film, the charge storage layer and the block insulating film are stacked on the semiconductor substrate. Thereafter, the control gate electrode is formed on the block insulating film.
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