| 发明名称 |
HIGH-VOLTAGE POWER TRANSISTOR USING SOI TECHNOLOGY |
| 摘要 |
The power transistor configured to be integrated into a trench-isolated thick layer SOI-technology with an active silicon layer with a thickness of about 50μm. The power transistor may have a lower resistance than the DMOS transistor and a faster switch-off behavior than the IGBT.
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| 申请公布号 |
US2011156093(A1) |
申请公布日期 |
2011.06.30 |
| 申请号 |
US20090999028 |
申请日期 |
2009.06.15 |
| 申请人 |
X-FAB SEMICONDUCTOR FOUNDRIES AG |
发明人 |
LERNER RALF |
| 分类号 |
H01L29/739;H01L21/331 |
主分类号 |
H01L29/739 |
| 代理机构 |
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代理人 |
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