SEMICONDUCTOR DEVICE WITH MULTILAYER CONTACT AND METHOD OF MANUFACTURING THE SAME
摘要
The present invention provides a semiconductor with a multilayered contact structure. The multilayered structure includes a metal contact placed on an active region of a semiconductor and a metal contact extension placed on the metal contact.
申请公布号
WO2011077181(A1)
申请公布日期
2011.06.30
申请号
WO2009IB55864
申请日期
2009.12.21
申请人
NXP B.V.;HABENICHT, SOENKE;OELGESCHLAEGER, DETLEF;SCHUMACHER, OLRIK;BERGLUND, STEFAN BENGT
发明人
HABENICHT, SOENKE;OELGESCHLAEGER, DETLEF;SCHUMACHER, OLRIK;BERGLUND, STEFAN BENGT
