| 摘要 |
<p>A method for producing an integrated device including a capacitor. The method includes the steps of providing a functional substrate including functional circuits of the integrated device, forming a first conductive layer including a first plate of the capacitor on the functional substrate, forming a layer of insulating material including a dielectric layer of the capacitor on a portion of the first conductive layer corresponding to the first plate, forming a second conductive layer including a second plate of the capacitor and functional connections to the functional circuits on a portion of the layer of insulating material corresponding to the dielectric layer, forming a protective layer of insulating material covering the second plate and the functional connections, forming a first contact for contacting the first plate, and forming a second contact and functional contacts for contacting the second plate and the functional connections, respectively, through the protective layer.</p> |
